SEMIX353GB126HDS_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SEMiX353GB126HDs
SEMiX^® 3s
Trench IGBT Modules
SEMiX353GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T_C=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 600 V
V_GE ≤ 20 V
V_CES ≤ 1200 V
T_j = 125 °C
Inverse diode
I_F
T_j = 150 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FRM = 2xI_Fnom
I_FSM
t_p = 10 ms, sin 180°, T_j = 25 °C
T_j
Module
I_t(RMS)
T_terminal = 80 °C
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
I_C = 225 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 125 °C
V_GE = 15 V
T_j = 25 °C
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
V_GE=V_CE, I_C = 9 mA
V_GE = 0 V
V_CE = 1200 V
T_j = 25 °C
T_j = 125 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 600 V
I_C = 225 A
V_GE = ±15 V
R_{G on} = 2 
R_{G off} = 2 
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
T_j = 125 °C
E_off
T_j = 125 °C
R_th(j-c)
per IGBT
Values
1200
364
256
225
450
-20 ... 20
10
-40 ... 150
329
228
225
450
1700
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.7
2.0
1
0.9
3.1
4.9
5.8
0.1
16.0
0.84
0.73
1800
3.33
265
55
26.5
585
120
32.5
max. Unit
2.1
V
2.45
V
1.2
V
1.1
V
4.0
m
6.0
m
6.5
V
0.3
mA
mA
nF
nF
nF
nC

ns
ns
mJ
ns
ns
mJ
0.1
K/W
GB
© by SEMIKRON
Rev. 1 – 23.03.2011
1