|
SEMIX303GB12E4S_11 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules | |||
|
◁ |
SEMiX303GB12E4s
SEMiX® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 ï
RGoff,main = 1,0 ï
RG,X = 2,0 ï
RE,X = 0,5 ï
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A
VGE = 0 V
chip
Tj = 25 °C
Tj = 150 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-c)
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
IF = 300 A
Tj = 150 °C
di/dtoff = 5100 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Module
LCE
RCC'+EE'
res., terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
Ms
Mt
per module
to heat sink (M5)
to terminals (M6)
min.
1.1
0.7
2.7
3.5
3
2.5
typ.
2.2
2.2
1.3
0.9
3.0
4.2
300
44.2
17.7
20
0.7
1
0.04
max.
2.52
2.5
1.5
1.1
3.4
4.6
0.18
5
5
w
Temperatur Sensor
R100
Tc=100°C (R25=5 kï)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
300
493 ± 5%
3550
±2%
Unit
V
V
V
V
mï
mï
A
µC
mJ
K/W
nH
mï
mï
K/W
Nm
Nm
Nm
g
ï
K
GB
2
Rev. 1 â 05.01.2011
© by SEMIKRON
|
▷ |