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SEMIX303GB12E4S_11 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX303GB12E4s
SEMiX® 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠High short circuit capability
⢠UL recognized, file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic Welding
Remarks
⢠Case temperature limited to TC=125°C
max.
⢠Product reliability results are valid for
Tj=150°C
⢠Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0 ï
RGoff,main = 1,0 ï
RG,X = 2,0 ï
RE,X = 0,5 ï
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ⤠20 V
VCES ⤠1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 11.4 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 300 A
VGE = ±15 V
RG on = 1.8 ï
RG off = 1.8 ï
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5250 A/µs Tj = 150 °C
di/dtoff = 2825 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
466
359
300
900
-20 ... 20
10
-40 ... 175
338
252
300
900
1485
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
18.5
1.22
1.03
1695
2.50
255
57
30
565
98
41.2
max. Unit
2.05
V
2.4
V
0.9
V
0.8
V
3.8
mï
5.3
mï
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ï
ns
ns
mJ
ns
ns
mJ
0.095 K/W
GB
© by SEMIKRON
Rev. 1 â 05.01.2011
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