SEMIX302GB066HDS_08 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX302GB066HDs
SEMiX^®2s
Trench IGBT Modules
SEMiX302GB066HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 300 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 300 A
T_j = 150 °C
di/dt_off = 3600 A/µs
V_GE = -8 V
T_j = 150 °C
V_CC = 300 V
T_j = 150 °C
per diode
Module
L_CE
R_CC'+EE'
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
R_th(c-s)
M_s
M_t
w
per module
to heat sink (M5)
to terminals (M6)
Temperature sensor
R₁₀₀
T_c=100°C (R₂₅=5 kΩ)
B_100/125
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
typ.
max. Unit
1.4
1.6
V
1.4
1.6
V
0.9
1
1.1
V
0.75
0.85
0.95
V
1.0
1.3
1.7
mΩ
1.5
1.8
2.2
mΩ
240
A
35
µC
7.5
mJ
0.19 K/W
18
nH
0.7
mΩ
1
mΩ
0.045
K/W
3
5
Nm
2.5
5
Nm
250
g
0,493
±5%
kΩ
3550
±2%
K
GB
2
Rev. 11 – 02.12.2008
© by SEMIKRON