SEMIX302GB066HDS_08 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SEMiX302GB066HDs
SEMiX^®2s
Trench IGBT Modules
SEMiX302GB066HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 360 V
V_GE ≤ 15 V
T_j = 150 °C
V_CES ≤ 600 V
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
I_C = 300 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 4.8 mA
V_GE = 0 V
V_CE = 600 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 300 V
I_C = 300 A
T_j = 150 °C
R_{G on} = 5.1 Ω
R_{G off} = 5.1 Ω
per IGBT
Values
600
379
286
300
600
-20 ... 20
6
-40 ... 175
419
307
300
600
1400
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.9
V
1.70
2.1
V
0.9
1
V
0.85
0.9
V
1.8
3.0
mΩ
2.8
4.0
mΩ
5
5.8
6.5
V
0.15
0.45 mA
mA
18.5
nF
1.15
nF
0.55
nF
2400
nC
1.00
Ω
110
ns
85
ns
11.5
mJ
820
ns
70
ns
15
mJ
0.16 K/W
GB
© by SEMIKRON
Rev. 11 – 02.12.2008
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