SEMIX202GB066HDS_08 Datasheet, PDF (2/5 Pages) Semikron International – Trench IGBT Modules

SEMiX202GB066HDs
SEMiX^®2s
Trench IGBT Modules
SEMiX202GB066HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Characteristics
Symbol Conditions
Inverse diode
V_F = V_EC
I_F = 200 A
V_GE = 0 V
chiplevel
T_j = 25 °C
T_j = 150 °C
V_F0
r_F
I_RRM
Q_rr
E_rr
R_th(j-c)
R_th(j-s)
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
I_F = 200 A
T_j = 150 °C
di/dt_off = 3900 A/µs
V_GE = -8 V
T_j = 150 °C
V_CC = 300 V
T_j = 150 °C
per diode
per diode
Module
L_CE
R_CC'+EE'
R_th(c-s)
M_s
M_t
res., terminal-chip ^{TC = 25 °C}
T_C = 125 °C
per module
to heat sink (M5)
to terminals (M6)
w
Temperature sensor
R₁₀₀
B_100/125
T_c=100°C (R₂₅=5 kΩ)
R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)];
T[K];
min.
0.9
0.75
1.5
2.3
3
2.5
typ.
1.4
1.4
1
0.85
2.0
2.8
205
28
6.5
18
0.7
1
0.045
0,493
±5%
3550
±2%
max. Unit
1.6
V
1.6
V
1.1
V
0.95
V
2.5
mΩ
3.3
mΩ
A
µC
mJ
0.27 K/W
K/W
nH
mΩ
mΩ
K/W
5
Nm
5
Nm
Nm
250
g
kΩ
K
GB
2
Rev. 18 – 02.12.2008
© by SEMIKRON