SEMIX202GB066HDS_08 Datasheet, PDF (1/5 Pages) Semikron International – Trench IGBT Modules

SEMiX202GB066HDs
SEMiX^®2s
Trench IGBT Modules
SEMiX202GB066HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V_CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T_C=125°C
max.
• Product reliability results are valid for
T_j=150°C
• For short circuit: Soft R_Goff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
V_CES
I_C
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Cnom
I_CRM
V_GES
t_psc
T_j
I_CRM = 2xI_Cnom
V_CC = 360 V
V_GE ≤ 15 V
T_j = 150 °C
V_CES ≤ 600 V
Inverse diode
I_F
T_j = 175 °C
T_c = 25 °C
T_c = 80 °C
I_Fnom
I_FRM
I_FSM
T_j
I_FRM = 2xI_Fnom
t_p = 10 ms, sin 180°, T_j = 25 °C
Module
I_t(RMS)
T_stg
V_isol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
V_CE(sat)
V_CE0
r_CE
V_GE(th)
I_CES
C_ies
C_oes
C_res
Q_G
R_Gint
t_d(on)
t_r
E_on
t_d(off)
t_f
E_off
R_th(j-c)
R_th(j-s)
I_C = 200 A
V_GE = 15 V
chiplevel
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_GE = 15 V
T_j = 25 °C
T_j = 150 °C
V_GE=V_CE, I_C = 3.2 mA
V_GE = 0 V
V_CE = 600 V
T_j = 25 °C
T_j = 150 °C
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
V_GE = - 8 V...+ 15 V
T_j = 25 °C
V_CC = 300 V
I_C = 200 A
T_j = 150 °C
R_{G on} = 4.2 Ω
R_{G off} = 4.2 Ω
per IGBT
per IGBT
GB
© by SEMIKRON
Rev. 18 – 02.12.2008
Values
600
274
207
200
400
-20 ... 20
6
-40 ... 175
291
214
200
400
1000
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.45
1.9
V
1.70
2.1
V
0.9
1
V
0.85
0.9
V
2.8
4.5
mΩ
4.3
6.0
mΩ
5
5.8
6.5
V
0.15
0.45 mA
mA
12.3
nF
0.77
nF
0.37
nF
1600
nC
1.00
Ω
65
ns
80
ns
6
mJ
545
ns
95
ns
8
mJ
0.21 K/W
K/W
1