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SEMIX353GB176HDS_09 Datasheet, PDF (1/6 Pages) Semikron International – Trench IGBT Modules | |||
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SEMiX353GB176HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX353GB176HDs
Features
⢠Homogeneous Si
⢠Trench = Trenchgate technology
⢠VCE(sat) with positive temperature
coefficient
⢠UL recognised file no. E63532
Typical Applications*
⢠AC inverter drives
⢠UPS
⢠Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 1000 V
VGE ⤠20 V
VCES ⤠1700 V
Tj = 125 °C
Inverse diode
IF
IFnom
IFRM
IFSM
Tj
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 225 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 9 mA
VGE = 0 V
VCE = 1700 V
Tj = 25 °C
Tj = 125 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V
IC = 225 A
Tj = 125 °C
Tj = 125 °C
RG on = 5.6 â¦
RG off = 5.6 â¦
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
1700
353
251
225
450
-20 ... 20
10
-55 ... 150
428
289
225
450
1800
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2
2.45
V
2.45
2.9
V
1
1.2
V
0.9
1.1
V
4.4
5.6
mâ¦
6.9
8.0
mâ¦
5.2
5.8
6.4
V
0.1
0.3
mA
mA
19.9
nF
0.83
nF
0.66
nF
2100
nC
2.83
â¦
250
ns
75
ns
155
mJ
930
ns
180
ns
85
mJ
0.086 K/W
GB
© by SEMIKRON
Rev. 12 â 16.12.2009
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