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| HRP58N06K Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 60V N-Channel Trench MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
â Note :
1. VGS = 0 V
2. ID = 250µA
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
103
Operation in This Area
is Limited by R DS(on)
100 µs
102
1 ms
10 ms
101
DC
100
* Notes :
10-1
1. T = 25 oC
C
2. TJ = 175 oC
3. Single Pulse
10-2
10-1
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. VGS = 10 V
2. I = 40 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
10-1
0.2
0.1
* Notes :
1. ZθJC(t) = 0.7 oC/W Max.
2. Duty Factor, D=t1/t2
3. T - T = P * Z (t)
JM
C
DM
θJC
0.05
10-2
0.02
0.01
single pulse
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Jan 2015
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