HRP58N06K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 60V N-Channel Trench MOSFET

Typical Characteristics
V_GS
Top : 15 V
10 V
8V
7V
6V
10²
5.5 V
5V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
10¹
2. T = 25oC
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
7.0
V_GS = 10V
6.5
6.0
5.5
5.0
4.5
∗ Note : T_J = 25^oC
4.0
0
40
80
120 160 200 240 280 320
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_iss
C =C
rss gd
3000
2000
1000
C_oss
* Note ;
C_rss
1. V = 0 V
GS
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10 ^175oC
25^oC
1
* Notes :
1. V = 20V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 48V
DS
I_D = 30A
0
0
10 20 30
40
50
60 70 80 90
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Jan 2015