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| HFD5N65S Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
* Note :
1. VGS = 0 V
2.
I
D
=
250
µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100 ms
100
DC
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
10-1
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Note :
1.
V
GS
=
10
V
2. ID = 2.0 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
0.2
10-1
0.1
0.05
* Notes :
1. ZθJC(t) = 1.37 oC/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
PDM
single pulse
t1
10-2
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Mar 2010
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