HFD5N65S Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
6
5
V_GS = 10V
4
3
V_GS = 20V
2
1
* Note : T_J = 25^oC
0
0
2
4
6
8
10
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
C
iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
* Note
1. V = 50V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10¹
10⁰
150^oC
25^oC
10^-1
0.2
* Note :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 130V
10
V_DS = 325V
8
V_DS = 520V
6
4
2
* Note : I_D = 4.2A
0
0
2
4
6
8
10
12
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Mar 2010