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| HFD2N65S Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET | |||
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
* Note :
1. VGS = 0 V
2.
I
D
=
250
µA
0.8
-100
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
101
is Limited by R
DS(on)
100 µs
1 ms
100
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. V = 10 V
GS
2. ID = 0.9 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
0.1
0.05
* Notes :
1. ZθJC(t) = 2.87 oC/W Max.
2. Duty Factor, D=t1/t2
3. T - T = P * Z (t)
JM
C
DM
θJC
10-1 0.02
0.01
single pulse
PDM
10-2
10-5
10-4
10-3
10-2
t1
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Mar 2010
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