HFD2N65S Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 650V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
12
9
V_GS = 10V
6
V_GS = 20V
3
* Note : T_J = 25^oC
0
0
1
I_D, D²rain Curren³t[A]
4
5
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
V_DS, Drain-Source Voltage[V]
Figure 5. Capacitance Characteristics
V_GS, Gate-Source Voltage[V]
Figure 2. Transfer Characteristics
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 130V
10
V_DS = 325V
V_DS = 520V
8
6
4
2
* Note : I_D = 1.8A
0
0
2
4
6
8
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Mar 2010