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| HFD1N60S Datasheet, PDF (4/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET | |||
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Typical Characteristics (continued)
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
100
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
10-1
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â Note :
1. V = 10 V
GS
2. ID = 0.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
Figure 10. MaTxC,imCasuemTemDprearaitunreC[oCu]rrent
vs Case Temperature
D=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
single pulse
* Notes :
1. Z (t) = 4.53 oC/W Max.
θJC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
PDM
10-2
10-5
10-4
10-3
10-2
t1
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
â SEMIHOW REV.A0,Sep 2009
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