HFD1N60S Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Typical Characteristics
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
30
25
20
15
10
5
0
0.0
V_GS = 10V
V_GS = 20V
* Note : T_J = 25^oC
0.5
1.0
1.5
2.0
2.5
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
200
150
C_iss
100
C_oss
* Note ;
1. V_GS = 0 V
50
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
* Note : I = 1A
D
0
0
1
2
3
4
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009