HRP55N10K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET

Typical Characteristics
V
GS
Top : 15 V
10 V
8V
7V
6V
5.5 V
10²
5V
Bottom : 4.5 V
* Notes :
10¹
1. 300us Pulse Test
2. T = 25^oC
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
7.0
V_GS = 10V
6.5
6.0
5.5
5.0
4.5
4.0
∗ Note : T_J = 25^oC
3.5
0
50
100 150 200 250 300 350 400
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12000
10000
8000
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
C_iss
6000
4000
2000
C_oss
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10
175^oC
1
25^oC
* Notes :
1. V_DS= 20V
2. 300us Pulse Test
0.1
0
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
175^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 80V
I_D = 30A
0
0
30
60
90
120
150
180
210
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,December 2014