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HRP55N10K Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET
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Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 30 A
2.0
--
3.6
V
--
4.5 5.5 mΩ
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 30 A
--
100
--
S
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂
VDS = 80 V, VGS = 0 V
VDS = 80 V, TJ = 125℃
VGS = ±25 V, VDS = 0 V
100 --
--
V
--
--
1
㎂
--
-- 100 ㎂
--
-- ±100 ㎁
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 7900 --
㎊
--
880
--
㎊
--
540
--
㎊
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
2
--
Ω
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6 Ω
VDS = 80 V, ID = 30 A,
VGS = 10 V
--
90
--
㎱
--
110
--
㎱
--
330
--
㎱
--
80
--
㎱
--
190 --
nC
--
34
--
nC
--
72
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/μs
--
-- 170
A
--
-- 420
--
--
1.3
V
--
70
--
㎱
--
150 --
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=33A, VDD=40V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
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