HRP35N04K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 15 V
10 V
8V
7V
6V
5.5 V
10²
5V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
10¹
2. T_C = 25^oC
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3.4
V_GS = 10V
3.2
3.0
2.8
∗ Note : T_J = 25^oC
2.6
0
60
120
180
240
300
360
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_iss
C =C
rss gd
4000
3000
2000
1000
C_oss
C_rss
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10 175^oC
25^oC
1
* Notes :
1. V = 20V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
0.1
0.0
175^oC 25^oC
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 32V
DS
I_D = 30A
0
0
20
40
60
80
100
120
140
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,December 2014