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HRP35N04K Datasheet, PDF (2/8 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology
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Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 ㎂
2.0
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 40 A
--
gFS Forward Transconductance
VDS = 20, ID = 40 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂
40
VDS = 32 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, TJ = 125℃
--
IGSS Gate-Body Leakage Current
VGS = ±20 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 20 V, ID = 30 A,
--
RG = 6 Ω
--
--
--
VDS = 32 V, ID = 30 A,
--
VGS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 25 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 50 A/μs
--
--
3.6
V
2.9 3.5 mΩ
80
--
S
--
--
V
--
1
㎂
-- 100 ㎂
-- ±100 ㎁
4600 --
㎊
1000 --
㎊
700 --
㎊
1.7
--
Ω
70
--
㎱
110 --
㎱
150 --
㎱
90
--
㎱
110 --
nC
20
--
nC
45
--
nC
-- 150
A
-- 525
--
1.3
V
90
--
㎱
50
--
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=30A, VDD=35V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
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