HRLFS190N03K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested

Typical Characteristics
60
V_GS
Top : 10 V
6V
50
5V
4.5 V
4V
3.5 V
3V
40 ^{Bottom : 2.5 V}
30
20
* Notes :
1. 300us Pulse Test
10
2. T_C = 25^oC
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
50
40
30
V_GS = 4.5V
20
V = 10V
GS
10
Note : T = 25oC
J
0
0 5 10 15 20 25 30 35 40 45 50 55
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
900
800
700
600
500
400
300
200
100 _Crss
0
0
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss gd
C_iss
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
C_oss
5
10
15
20
25
30
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
60 _TJ=25oC
50
40
30
20
10
* Notes :
1. V_DS= 5V
2. 300us Pulse Test
0
0
1
2
3
4
5
6
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10²
10¹
10⁰
10^-1
10^-2
10^-3
10^-4
10^-5
0.0
125^oC 25^oC
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 24V
I = 10A
D
0
0
3
6
9
12
15
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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