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HRLFS190N03K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested | |||
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Jan 2016
HRLFS190N03K
30V N-Channel Trench MOSFET
FEATURES
 BVDSS = 30 V
 ID = 28 A
 Unrivalled Gate Charge : 12 nC (Typ.)
 Lower RDS(ON) : 16 PÈ (Typ.) @VGS=10V
 Lower RDS(ON) : 20 PÈ (Typ.) @VGS=4.5V
 100% Avalanche Tested
8DFN 3x3
1
Absolute Maximum Ratings TJ=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25à
TC = 100à
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TC= 25à
TA = 25à
Operating and Storage Temperature Range
30
Ï20
28
18
62
110
23
1.67
-55 to +150
Units
V
V
A
A
A
mJ
W
W
à
Thermal Resistance Characteristics
Symbol
Parameter
RÈJC
RÈJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
5.4
75
Units
à
/W
à
/W
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