HRLF33N03K Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested

Typical Characteristics
250
200
V
GS
Top : 10 V
8V
7V
6V
5V
4V
3.5 V
3.0 V
Bottom : 2.5 V
150
100
50
* Notes :
1. 300us Pulse Test
0
2.
T
C
=
25^oC
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
6
4
V_GS = 4.5V
2
V_GS = 10V
Note : T_J = 25^oC
0
0
50
100
150
200
250
300
350
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
C_iss
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
4000
3000
2000
1000
C_rss
0
0
5
* Note ;
1. V_GS = 0 V
2. f = 1 MHz
C_oss
10
15
20
25
30
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
250
T_J=25^oC
200
150
100
50
* Notes :
1. V = 5V
DS
2. 300us Pulse Test
0
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
125^oC 25^oC
1
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V = 24V
DS
I_D = 30A
0
0
30
60
90
120
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡