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HRLF33N03K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested | |||
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Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 á³
1.0
Static Drain-Source
RDS(ON) On-Resistance
VGS = 10 V, ID = 30 A
--
VGS = 4.5 V, ID = 25 A
--
gFS Forward Transconductance
VDS = 5 V, ID = 30 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
30
VDS = 24 V, VGS = 0 V
--
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, TJ = 125à
--
IGSS Gate-Body Leakage Current
VGS = Ï16 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
--
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
--
VDS = 15 V, ID = 30 A,
--
RG = 6 Â
--
--
--
VDS = 24 V, ID = 30 A,
--
VGS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V
--
trr Reverse Recovery Time
IS = 25 A, VGS = 0 V
--
Qrr Reverse Recovery Charge
diF/dt = 50 A/ÈV
--
--
2.4
V
2.7 3.3 mÂ
3.2 4.0 mÂ
65
--
S
--
--
V
--
1
á³
-- 100 á³
-- Ï100 á²
4900 --
á
550 --
á
500 --
á
1
--
Â
30
--
á¨
50
--
á¨
230 --
á¨
70
--
á¨
110 --
nC
15
--
nC
20
--
nC
--
85
A
-- 255
--
1.3
V
60
--
á¨
30
--
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=17A, VDD=25V, RG=25:, Starting TJ =25qC
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