HRLD80N06K Datasheet, PDF (3/8 Pages) SemiHow Co.,Ltd. – Originative New Design

Typical Characteristics
280
V_GS
240 ^{Top :}
10 V
9V
8V
7V
200
6V
5V
4V
3V
160 ^{Bottom : 2 V}
120
80
* Notes :
1. 300us Pulse Test
40
2. T_C = 25^oC
0
0
2
4
6
8
10
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
25
20
15
V_GS = 4.5V
10
5
V_GS = 10V
Note : T_J = 25^oC
0
0
50
100
150
200
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
5000
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
4000
3000
2000
1000
* Note ;
1. V = 0 V
GS
C_oss
2. f = 1 MHz
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
280
240
25^oC
200
160
120
175^oC
80
40
* Notes :
1. V_DS= 5V
2. 300us Pulse Test
0
2
3
4
5
6
7
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
175^oC 25^oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.8
1.2
1.6
2.0
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 48V
I_D = 30A
0
0
20
40
60
80
100
120
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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