HRLD80N06K Datasheet, PDF (1/8 Pages) SemiHow Co.,Ltd. – Originative New Design

HRLD80N06K / HRLU80N06K
60V N-Channel Trench MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 100 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) : 6.3 Pȍ (Typ.) @V_GS=10V
‰ Lower R_DS(ON) : 7.5 Pȍ (Typ.) @V_GS=4.5V
‰ 100% Avalanche Tested
June 2015
BV_DSS = 60 V
R_{DS(on) typ} Pȍ
I_D = 80 A
D-PAK I-PAK
2
1
1
3
2
3
HRLD80N06K HRLU80N06K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_A = 25୅)*
Power Dissipation (T_C = 25୅)
- Derate above 25୅
60
80 *
56 *
260 *
ρ20
340
16
3
160
1.07
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/୅
୅
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient*
R_șJA
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.9
50
110
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΦΟΖ͑ͣͦ͑͢͡