HFS2N90 Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
10¹
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 300us Pulse Test
2. T_C = 25^oC
10^-1
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
10
8
V_GS = 10V
6
4
V_GS = 20V
2
Note : T = 25oC
J
0
0
1
2
3
4
5
6
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
900
600
300
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
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1. V_GS = 0 V
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
150 䉝 25䉝
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1. V_GS = 0V
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10^-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 180V
10
V_DS = 450V
8
V_DS = 720V
6
4
2
* Note : I = 2.2A
D
0
0
4
8
12
16
20
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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