HFS2N90 Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Feb 2014
HFS2N90
900V N-Channel MOSFET
BV_DSS = 900 V
R_{DS(on) typ} ȍ
I_D = 2.2 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 17 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower R_DS(ON) ȍ7\S#9_GS=10V
‰ 100% Avalanche Tested
TO-220F
1 ₂₁
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
Drain-Source Voltage
900
I_D
Drain Current
– Continuous (T_C = 25ఁ͚͑
2.2*
Drain Current
– Continuous (T_C = 100ఁ͚͑
1.4*
I_DM
Drain Current
– Pulsed
(Note 1)
8.8*
V_GS
Gate-Source Voltage
ρ30
E_AS
Single Pulsed Avalanche Energy
(Note 2)
170
I_AR
Avalanche Current
(Note 1)
2.2
E_AR
Repetitive Avalanche Energy
(Note 1)
10.7
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
P_D
Power Dissipation (T_C = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
39
0.31
-55 to +150
300
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
3.2
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡