HFP4N60F_16 Datasheet, PDF (3/9 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET

Typical Characteristics
10¹
V_GS
Top : 10.0 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
Bottom : 4.0 V
10⁰
10^-1
10⁰
* Notes :
1. 300us Pulse Test
2. T = 25^oC
C
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
8
6
V_GS = 10V
4
2
V_GS = 20V
* Note : T_J = 25^oC
0
0
1
2
3
4
5
6
7
8
I_D, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
600
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
500
C_iss
C_rss = C_gd
400
C_oss
300
200
* Note ;
1. V_GS = 0 V
C_rss
2. f = 1 MHz
100
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25^oC
1
150^oC
-25^oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
0.1
2
3
4
5
6
7
8
9
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150^oC _25oC
0.1
0.2
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
* Note : I_D = 4.0A
0
0
2
4
6
8
10
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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