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HFP4N60F_16 Datasheet, PDF (2/9 Pages) SemiHow Co.,Ltd. – 600V N-Channel MOSFET
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Electrical Characteristics TJ=25୅ unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Unit
On Characteristics
VGS
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ȝ$
VGS = 10 V, ID = 2 A
2.0
--
4.0
V
--
2.6
3.2
Ÿ
gFS
Forward Transconductance
VDS = 30 V ID = 2 A
--
2.2
--
S
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ȝ$
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125୅
VGS = ρ30 V, VDS = 0 V
600
--
--
V
--
--
10
ȝ$
--
--
100
ȝ$
--
-- ρ100 nA
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
380 500
pF
--
45
60
pF
--
6.5
8.5
pF
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V, ID = 4 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480 V, ID = 4 A,
VGS = 10 V
(Note 4,5)
--
19
48
ns
--
19
48
ns
--
35
80
ns
--
22
54
ns
--
8.5
11
nC
--
2.1
--
nC
--
2.8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4 A
diF/dt = 100 A/ȝV
--
--
4
A
--
--
16
--
--
1.4
V
--
240
--
ns
--
1.4
--
ȝ&
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
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