HFA9N90Z Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
10^-1
10^-1
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. T_C = 25 䉝
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
3.0
2.5
V_GS = 10V
2.0
V_GS = 20V
1.5
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀_J = 25 䉝
1.0
0
5
10
15
20
25
30
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C_oss
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. V_GS = 0 V
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. V_DS = 50V
ȝ V3XOVH7HVW
10^-1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150 䉝
25䉝
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. V_GS = 0V
ȝ V3XOVH7HVW
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 180V
10
V_DS = 450V
V_DS = 720V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵_D = 9A
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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