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HFA9N90Z Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
VDS = VGS, ID = 250 á³
2.5
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.5 A
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 á³
900
ǻBVDSS Breakdown Voltage Temperature
/ǻTJ Coefficient
ID = 250 á³, Referenced to25à
--
IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V
--
VDS = 720 V, TC = 125à
--
IGSSF Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
IGSSR Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
Dynamic Characteristics
Ciss Input Capacitance
--
Coss Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
Crss Reverse Transfer Capacitance
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 450 V, ID = 9.0 A,
--
RG = 25 Â
--
--
(Note 4,5)
--
VDS = 720V, ID = 9.0 A,
--
VGS = 10 V
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0 A, VGS = 0 V
--
diFGW $ÈV(Note 4)
--
Typ Max Units
--
4.5
V
1.12 1.4
Â
--
--
V
0.99 -- V/à
--
10
á³
-- 100 á³
--
10
á³
--
-10
á³
2550 3310 á
180 240 á
28
36
á
150 310 á¨
70 150 á¨
270 550 á¨
180 370 á¨
55 70 nC
16
--
nC
21
--
nC
-- 9.0
A
--
36
--
1.4
V
660 --
á¨
7.8
--
È&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=21mH, IAS=9.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDÂ$GLGWÂ$ÈV9DDÂ%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ÂÈV'XW\&\FOHÂ
5. Essentially Independent of Operating Temperature
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