HCS65R290E Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss

Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 130V
V_DS = 325V
V_DS = 520V
8
6
4
2
Note : I_D = 15A
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
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