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HCS65R290E Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Extremely low switching loss | |||
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May 2016
HCS65R290E
650V N-Channel Super Junction MOSFET
Features
 Very Low FOM (RDS(on) X Qg)
 Extremely low switching loss
 Excellent stability and uniformity
 100% Avalanche Tested
 Higher dv/dt ruggedness
Application
 Lighting
 Hard Switching PWM
 Server Power Supply
 Charger
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
700
15
0.29
16
Unit
V
A
È
nC
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
dv/dt
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, VDS=0â¦480V
Reverse diode dv/dt, VDS=0â¦480V, IDSÂID
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
650
Ï30
15.0 *
9.3 *
45.0 *
290
50
15
32
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.9
62.5
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
à
à
Units
à
/W
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