HCS60R180S Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology

Typical Characteristics
V_GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
10¹
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
10⁰
2. T = 25oC
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On Region Characteristics
0.4
0.3
V_GS = 10V
0.2
0.1
V_GS = 20V
Note : T_J = 25^oC
0.0
0
9
18
27
36
45
I_D, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12000
10000
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
8000
C_oss
6000
4000
2000
0
10^-1
* Note ;
1. V = 0 V
C_iss
GS
2. f = 1 MHz
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25^oC
150^oC
-25^oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
0.1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
150^oC
25^oC
0.1
0.0
* Notes :
1. V_GS= 0V
2. 300us Pulse Test
0.2
0.4
0.6
0.8
1.0
1.2
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2
Note : I_D = 21A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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