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HCS60R180S Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Superior Avalanche Rugged Technology | |||
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HCS60R180S
600V N-Channel Super Junction MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 46 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) È7\S#9GS=10V
 100% Avalanche Tested
April 2015
BVDSS = 600 V
RDS(on) typ = 0.15 È
ID = 21 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
â Continuous (TC = 25à
)
â Continuous (TC = 100à
)
â Pulsed
(Note 1)
Gate-Source Voltage
Static
AC (f>1 Hz)
600
21 *
12 *
63 *
Ï20
Ï30
EAS
Single Pulsed Avalanche Energy
(Note 2)
710
IAR
Avalanche Current
(Note 1)
21
EAR
Repetitive Avalanche Energy
(Note 1)
1
dv/dt
Peak Diode Recovery dv/dt
15
PD
Power Dissipation (TC = 25à
)
- Derate above 25à
45
0.36
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8â from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RÈJC
RÈJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.8
60.5
Units
V
A
A
A
V
V
mJ
A
mJ
V/ns
W
W
à
à
Units
à
/W
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