HCA65R099FE Datasheet, PDF (3/7 Pages) SemiHow Co.,Ltd. – Excellent stability and uniformity

Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
10⁵
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss ds gd
C_rss = C_gd
10⁴
C_iss
10³
10²
C_oss
10¹
V_GS = 0 V
f = 1 MHz
10⁰
0
20
40
60
80
V_DS, Drain-Source Voltage [V]
C_rss
100
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
2
V_DS = 520V
I_D = 20A
0
0
10
20
30
40
50
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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