HCA65R099FE Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Excellent stability and uniformity

April 2016
HCA65R099FE (Fast Recovery Diode Type)
650V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (R_DS(on) X Q_g)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
‰ Higher reverse recovery dv/dt
‰ Fast Recovery Time
Application
‰ Telecom Power equipment / Server station
‰ Uninterruptible Power Supply (UPS)
‰ Micro Solar Inverter & EV Charger
‰ Suitable for soft switching (ZVS Full bridge & LLC)
demanding high efficiency
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), max}
Qg_{, Typ}
Value
700
40
99
45
Unit
V
A
Pȍ
nC
Package & Internal Circuit
TO-247
GD _S
Absolute Maximum Ratings T_C=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
dv/dt
dv/dt
P_D
T_J, T_STG
T_L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25୅)
– Continuous (T_C = 100୅)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
MOSFET dv/dt ruggedness, V_DS=0…480V
Reverse diode dv/dt, V_DS=0…480V, I_DS”I_D
Power Dissipation
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
650
ρ30
40
25
120
1000
100
50
278
-55 to +150
300
Units
V
V
A
A
A
mJ
V/ns
V/ns
W
୅
୅
Thermal Resistance Characteristics
Symbol
R_șJC
R_șJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.45
40
Units
୅/W
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