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HRP49N10H Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET
◁
Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 20 A
2.0
-- 4.0
V
--
4.2 4.9 mΩ
gFS Forward Transconductance
Off Characteristics
VDS = 5 V, ID = 20 A
--
60
--
S
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂
VDS = 100 V, VGS = 0 V
VDS = 100 V, TJ = 100℃
VGS = ±20 V, VDS = 0 V
100
--
--
V
--
--
1
㎂
--
-- 100 ㎂
--
-- ±100 ㎁
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
-- 5110 --
㎊
-- 400 --
㎊
--
19
--
㎊
Rg Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
--
0.7
--
Ω
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 50 V, ID = 20 A,
RG = 10 Ω
VDS = 50 V, ID = 20 A,
VGS = 10 V
--
20
--
㎱
--
12
--
㎱
--
65
--
㎱
--
10
--
㎱
--
61
--
nC
--
20
--
nC
--
10
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 20 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 20 A, VR = 50 V
diF/dt = 500 A/μs
--
-- 150
A
--
-- 450
--
--
1.2
V
--
60
--
㎱
-- 420 --
nC
◎ SEMIHOW REV.A0,December 2016
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