HRP49N10H Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 100V N-Channel Trench MOSFET

Dec 2016
HRP49N10H
100V N-Channel Trench MOSFET
Features
 High Speed Power Switching, Logic Level
 Enhanced Body diode dv/dt capability
 Enhanced Avalanche Ruggedness
 100% UIS Tested, 100% Rg Tested
 Lead free, Halogen Free
Application
 Synchronous Rectification in SMPS
 Hard Switching and High Speed Circuit
 Power Tools
 UPS & Motor Control
Key Parameters
Parameter
BV_DSS
I_D
R_{DS(on), typ}
Value
100
150
4.2
Unit
V
A
mΩ
Package & Internal Circuit
TO-220
G
D
S
Absolute Maximum Ratings T_J=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T_C = 25℃
T_C = 100℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
T_C = 25℃
Operating and Storage Temperature Range
100
±20
150
105
450
180
250
-55 to +175
Units
V
V
A
A
A
mJ
W
℃
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
R_θJA
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.6
62.5
Units
℃/W
℃/W
◎ SEMIHOW REV.A0,December 2016