HRLP80N06K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Originative New Design

Electrical Characteristics T_J=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
V_DS = V_GS, I_D = 250 ㎂
1.0
Static Drain-Source
R_{DS(ON) On-Resistance}
V_GS = 10 V, I_D = 30 A
--
V_GS = 4.5 V, I_D = 15 A
--
g_FS Forward Transconductance
V_DS = 5, I_D = 30 A
--
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 ㎂
60
V_DS = 48 V, V_GS = 0 V
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 48 V, T_J = 125℃
--
I_GSS Gate-Body Leakage Current
V_GS = ±20 V, V_DS = 0 V
--
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = 25 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
--
V_DS = 30 V, I_D = 30 A,
--
R_G = 6 Ω
--
--
--
V_DS = 48 V, I_D = 30 A,
--
V_GS = 10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 30 A, V_GS = 0 V
--
trr Reverse Recovery Time
I_S = 30 A, V_GS = 0 V
--
Qrr Reverse Recovery Charge
di_F/dt = 100 A/μs
--
--
2.4
V
6.3
8
mΩ
7.5 10 mΩ
50
--
S
--
--
V
--
1
㎂
-- 100 ㎂
-- ±100 ㎁
4200 --
㎊
380 --
㎊
300 --
㎊
1.6
--
Ω
30
--
㎱
55
--
㎱
200 --
㎱
50
--
㎱
100 --
nC
20
--
nC
25
--
nC
--
80
A
-- 260
--
1.3
V
70
--
㎱
100 --
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I_AS=20A, V_DD=25V, R_G=25Ω, Starting T_J =25°C
◎ SEMIHOW REV.A0,Sep 2015