HRLP80N06K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Originative New Design

HRLP80N06K
60V N-Channel Trench MOSFET
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 100 nC (Typ.)
 Extended Safe Operating Area
 Lower R_DS(ON) : 6.3 mΩ (Typ.) @V_GS=10V
 Lower R_DS(ON) : 7.5 mΩ (Typ.) @V_GS=4.5V
 100% Avalanche Tested
Sep 2015
BV_DSS = 60 V
R_{DS(on) typ} = 6.3mΩ
I_D = 80 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings T_C=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
P_D
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (T_C = 25℃)
– Continuous (T_C = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (T_C = 25℃)
- Derate above 25℃
60
80
56
260
±20
340
20
200
1.33
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.75
--
62.5
Units
℃/W
◎ SEMIHOW REV.A0,Sep 2015