HRLFS120N06H Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 60V N-Channel Trench MOSFET

Electrical Characteristics T_J=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
V_DS = V_GS, I_D = 250 ㎂
1.0
Static Drain-Source
R_{DS(ON) On-Resistance}
V_GS = 10 V, I_D = 10 A
--
V_GS = 4.5 V, I_D = 8 A
--
g_FS Forward Transconductance
V_DS = 5 V, I_D = 10 A
--
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 ㎂
60
V_DS = 60 V, V_GS = 0 V
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 60 V, T_J = 100℃
--
I_GSS Gate-Body Leakage Current
V_GS = ±20 V, V_DS = 0 V
--
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = 30 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
--
V_DS = 30 V, I_D = 10 A,
--
R_G = 10 Ω
--
--
Q_{g (10V)}
Q_{g (4.5V)}
Q_gs
Q_gd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
V_DS = 30 V, I_D = 10 A,
--
V_GS = 10 V
--
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 10 A, V_GS = 0 V
--
trr Reverse Recovery Time
I_S = 10 A, V_R = 30 V
--
Qrr Reverse Recovery Charge
di_F/dt = 300 A/μs
--
--
3.0
V
8.5 11.5 mΩ
12 16 mΩ
25
--
S
--
--
V
--
1
㎂
-- 100 ㎂
-- ±100 ㎁
1040 --
㎊
318 --
㎊
15
--
㎊
1.5
--
Ω
6
--
㎱
3
--
㎱
25
--
㎱
3
--
㎱
18.5 --
nC
9.0
--
nC
4.5
--
nC
3.5
--
nC
--
33
A
-- 100
0.9 1.2
V
25
--
㎱
33
--
nC
◎ SEMIHOW REV.A0,December 2016