HRLFS120N06H Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 60V N-Channel Trench MOSFET

Dec 2016
HRLFS120N06H
60V N-Channel Trench MOSFET
Features
 Optimized for High Speed Switching, Logic Level
 Enhanced Body diode dv/dt capability
 Enhanced Avalanche Ruggedness
 100% UIS Tested, 100% Rg Tested
 Lead free, Halogen Free
Application
 Synchronous Rectification in SMPS
 Hard Switching and High Speed Circuit
 DC/DC in Telecoms and Industrial
Key Parameters
Parameter
BV_DSS @T_j,max
I_D
R_{DS(on), typ @10V}
R_{DS(on), typ @4.5V}
Value
65
33
8.5
12
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
8DFN 3x3
DDDD
S ^SSG
Absolute Maximum Ratings T_J=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T_C = 25℃
T_C = 100℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
T_C = 25℃
T_A = 25℃
Operating and Storage Temperature Range
60
±20
33
21
100
20
25
1.67
-55 to +150
Thermal Resistance Characteristics
Symbol
Parameter
R_θJC
R_θJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
5
75
Units
V
V
A
A
A
mJ
W
W
℃
Units
℃/W
℃/W
◎ SEMIHOW REV.A0,December 2016