HRLF55N03K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested

Electrical Characteristics T_J=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
V_DS = V_GS, I_D = 250 Ꮃ
1.0
Static Drain-Source
R_{DS(ON) On-Resistance}
V_GS = 10 V, I_D = 20 A
--
V_GS = 4.5 V, I_D = 15 A
--
g_FS Forward Transconductance
V_DS = 5, I_D = 20 A
--
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = 250 Ꮃ
30
V_DS = 24 V, V_GS = 0 V
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = 24 V, T_J = 125୅
--
I_GSS Gate-Body Leakage Current
V_GS = ρ20 V, V_DS = 0 V
--
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = 15 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
--
V_DS = 15 V, I_D = 20 A,
--
R_G = 6 Ÿ
--
--
Q_{g (10V)}
Q_{g (4.5V)}
Q_gs
Q_gd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
V_DS = 24 V, I_D = 20 A,
--
V_GS = 10 V
--
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
I_SM Pulsed Source-Drain Diode Forward Current
--
V_SD Source-Drain Diode Forward Voltage I_S = 20 A, V_GS = 0 V
--
trr Reverse Recovery Time
I_S = 20 A, V_GS = 0 V
--
Qrr Reverse Recovery Charge
di_F/dt = 55 A/ȝV
--
--
2.4
V
4.2 5.5 mŸ
7.5 9.0 mŸ
30
--
S
--
--
V
--
1
Ꮃ
-- 100 Ꮃ
-- ρ100 Ꮂ
2050 --
Ꮔ
315 --
Ꮔ
240 --
Ꮔ
1
--
Ÿ
15
--
Ꭸ
20
--
Ꭸ
65
--
Ꭸ
70
--
Ꭸ
50
--
nC
26
--
nC
8
--
nC
8
--
nC
--
65
A
-- 195
--
1.3
V
20
--
Ꭸ
10
--
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I_AS=10A, V_DD=25V, R_G=25:, Starting T_J =25qC
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