HRLF55N03K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – 100% Avalanche Tested

Jan 2016
HRLF55N03K
30V N-Channel Trench MOSFET
FEATURES
‰ BV_DSS = 30 V
‰ I_D = 65 A
‰ Unrivalled Gate Charge : 50 nC (Typ.)
‰ Lower R_DS(ON) : 4.2 Pȍ (Typ.) @V_GS=10V
‰ Lower R_DS(ON) : 7.5 Pȍ (Typ.) @V_GS=4.5V
‰ 100% Avalanche Tested
8DFN 5x6
1
Absolute Maximum Ratings T_J=25୅ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_GS
I_D
I_DM
E_AS
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T_C = 25୅
T_C = 100୅
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
T_C= 25୅
T_A = 25୅
Operating and Storage Temperature Range
30
ρ20
65
41
195
300
33
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
୅
Thermal Resistance Characteristics
Symbol
Parameter
R_șJC
R_șJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
3.8
62
Units
୅/W
୅/W
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