HRLF120N10H Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Enhanced Avalanche Ruggedness

Electrical Characteristics T_J=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS
R_DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
g_FS Forward Transconductance
Off Characteristics
V_DS = V_GS, I_D = 250 ㎂
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 20 A
V_DS = 5, I_D = 20 A
1.0
-- 3.0
V
--
9.5 12 mΩ
-- 11.5 15 mΩ
--
30
--
S
BV_DSS
I_DSS
I_GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V_GS = 0 V, I_D = 250 ㎂
V_DS = 100 V, V_GS = 0 V
V_DS = 100 V, T_J = 100℃
V_GS = ±20 V, V_DS = 0 V
100
--
--
V
--
--
1
㎂
--
-- 100 ㎂
--
-- ±100 ㎁
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = 50 V, V_GS = 0 V,
f = 1.0 MHz
-- 2275 --
㎊
-- 162 --
㎊
--
7.9
--
㎊
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
1.5
--
Ω
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
V_DS = 50 V, I_D = 12 A,
R_G = 10 Ω
--
8
--
㎱
--
3
--
㎱
--
26
--
㎱
--
4
--
㎱
Q_{g (10V)}
Q_{g (4.5V)}
Q_gs
Q_gd
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_DS = 50 V, I_D = 12 A,
V_GS = 10 V
--
29
--
nC
--
14
--
nC
--
5
--
nC
--
5
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
V_SD Source-Drain Diode Forward Voltage I_S = 12 A, V_GS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S = 12 A, V_GS = 0 V
di_F/dt = 500 A/μs
--
--
60
A
--
-- 160
--
0.9 1.2
V
--
33
--
㎱
-- 157 --
nC
◎ SEMIHOW REV.A0,Jan 2016