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HRLF120N10H Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Enhanced Avalanche Ruggedness | |||
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Jan 2016
HRLF120N10H
100V N-Channel Trench MOSFET
Features
ï± High Speed Power Switching, Logic Level
ï± Enhanced Body diode dv/dt capability
ï± Enhanced Avalanche Ruggedness
ï± 100% UIS Tested, 100% Rg Tested
ï± Lead free, Halogen Free
Application
ï± Synchronous Rectification in SMPS
ï± Hard Switching and High Speed Circuit
ï± DC/DC in Telecoms and Inductrial
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
100
60
9.5
11.5
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
8DFN 5x6
D
D
D
D
SG
SS
Absolute Maximum Ratings TJ=25â unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TC = 25â
TC = 100â
Single Pulsed Avalanche Energy
L=0.1mH
Power Dissipation
TC = 25â
TA = 25â
Operating and Storage Temperature Range
100
±20
60
38
160
22
83
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
â
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (steady state)
Typ.
--
--
Max.
1.5
62
Units
â/W
â/W
â SEMIHOW REV.A0,Jan 2016
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