HRLE550P03K Datasheet, PDF (2/7 Pages) SemiHow Co.,Ltd. – Reliable and Rugged

Electrical Characteristics T_A=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
V_GS Gate Threshold Voltage
V_DS = V_GS, I_D = -250 Ꮃ
-1.0
Static Drain-Source
R_{DS(ON)1 On-Resistance}
V_GS = -10 V, I_D = -4 A
--
V_GS = -4.5 V, I_D = -3 A
--
V_GS = -2.5 V, I_D = -2 A
--
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D = -250 Ꮃ
-30
V_DS = -24 V, V_GS = 0 V
--
I_DSS
Zero Gate Voltage Drain Current
V_DS = -24 V, T_J = 70୅
--
I_GSS Gate-Body Leakage Current
V_GS = ρ12 V, V_DS = 0 V
--
Dynamic Characteristics ²
C_iss Input Capacitance
C_oss Output Capacitance
--
V_DS = -10 V, V_GS = 0 V,
--
f = 1.0 MHz
C_rss Reverse Transfer Capacitance
--
R_g Gate Resistance
V_GS = 0 V, V_DS = 0 V, f = 1MHz
--
Switching Characteristics ²
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
--
V_DS = -15 V, I_D = -1 A,
--
R_G = 6 Ÿ
--
--
--
V_DS = -15 V, I_D = -4 A,
--
V_GS = -10 V
--
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
--
V_SD1 Source-Drain Diode Forward Voltage I_S = -1 A, V_GS = 0 V
--
trr Reverse Recovery Time
I_S = -4 A, V_GS = 0 V
--
Qrr Reverse Recovery Charge
di_F/dt = 100 A/ȝV
--
Notes ;
1. Pulse test : pulse width ”300ns, duty cycle ”2%
2. Guaranteed by design, not subject to production testing
-- -2.5 V
45
55
mŸ
57
65
mŸ
80 100 mŸ
--
--
V
--
-1
Ꮃ
--
-10
Ꮃ
-- ρ100 nA
885 --
Ꮔ
75
--
Ꮔ
65
--
Ꮔ
6
--
Ÿ
5.5
--
Ꭸ
12
--
Ꭸ
58
--
Ꭸ
28
--
Ꭸ
18
--
nC
1.5
--
nC
2.9
--
nC
-1
--
A
-- -1.1 V
13
--
Ꭸ
7
--
nC
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