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HRLE550P03K Datasheet, PDF (1/7 Pages) SemiHow Co.,Ltd. – Reliable and Rugged | |||
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HRLE550P03K
-30V P-Channel MOSFET
FEATURES
 Super High Dense Cell Design
 Reliable and Rugged
 Lower RDS(ON) : 55 PÈ (Max.) @VGS=-10V
 Lower RDS(ON) : 65 PÈ (Max.) @VGS=-4.5V
 Lower RDS(ON) : 100 PÈ (Max.) @VGS=-2.5V
 100% Avalanche Tested
Feb 2015
BVDSS = - 30 V
RDS(on)max = 55 PÈ
ID = - 4 A
SOT-23
D
S
G
Absolute Maximum Ratings TA=25à
unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TA = 25à
TA = 70à
Power Dissipation
TA = 25à
TA = 100à
Operating and Storage Temperature Range
-30
Ï12
-4
-3.1
-12
1.4
0.6
-55 to +150
Units
V
V
A
A
A
W
W
à
Thermal Resistance Characteristics
Symbol
Parameter
RÈJA
Junction-to-Ambient
Typ.
--
Max.
95
Units
à
/W
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